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參數(shù)資料
| 型號(hào)： | CLP200M |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE |
| 中文描述： | 過壓和過流保護(hù)的電信線路保護(hù) |
| 文件頁數(shù)： | 8/21頁 |
| 文件大?。?/td> | 232K |
| 代理商： | CLP200M |
Fig.10 :
Transversal andlongitudinaltest
topologies.
Fig. 12 :
Powercontacttestcircuit.
Fig. 11 :
Powerinductiontest circuit.
A or B
B orA
E
15
25
0.2
μ
F
50
20
μ
F
4kv
ITEM
UNDER
TEST
A
B
E
15
25
0.2
μ
F
50
20
μ
F
ITEM
UNDER
TEST
25
4kv
TRANSVERSAL TEST
LONGITUDINAL TEST
A
B
R1
ITEM
UNDER
TEST
R2
1
μ
F
1
μ
F
E
S2
S1
100
A
B
<10
ITEM
UNDER
TEST
<10
E
600
600
3. CLP200MTESTSRESULTSACCORDINGTO
CCITTK20RECOMMENDATIONS
3.1CCITTK20 Recommendations
In respect with the CCITT recommendations, the
CLP200M has to withstand three kinds of distur-
bances.
3.1.1. Lightning simulation
(Test2, table2/K20)
Thistest shallbe donein transversaland longitudi-
nalmodesas shown in figure10.
The test generator is the 10/700
μ
s with 4kV of
peakvoltage.
3.1.2. Powerinduction
(Test3a and3b, table2/K20)
Twokinds of testsusing thesame circuittopology
(seefig.11)are definedin theCCITTK20.
Test3a :
Vac(max)= 300V
RMS
, R1= R2= 600
S2 operatingandtest duration= 200ms.
Test3b :
Vac(max)= 300V
RMS
(*), R1 = R2 = 200
S2 operatingandtest durationnot defined.
(*)Recommendedvalue.
3.1.3.Powercontact(Test 3, table1/K20)
Thistest shallbe donewiththe testcircuitof figure
12.
Vac(max) = 220V
RMS
, with switch S in each posi-
tionand duration 15 min.
3.1.4.Acceptancecriteriaand numberof tests
Forthetestsdescribedin chapter3.1.1.,3.1.2.and
3.1.3.two criteria aredefined :
A:Equipmentshall withstandthe testwithout dam-
ageand shall operate properlywithin the specified
limits.
B:A firehazard shouldnot occur in the equipment
asa resultof the tests.
The criteria are affected to the different tests as
mentionedin the table1.
CLP200M
8/21
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