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參數(shù)資料
| 型號： | CMT10N10N220 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 功率場效應晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 168K |
| 代理商： | CMT10N10N220 |
CMT10N10
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2001/12/24
Preliminary
Rev. 1
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
This advanced MOSFET is designed to withstand high
energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode
with a fast recovery time. Designed for high voltage, high
speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
TO-220
Front View
FEATURES
!
Avalanche Energy Specified
!
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
!
Diode is Characterized for Use in Bridge Circuits
!
I
DSS
and V
DS
(on) Specified at Elevated Temperature
SYMBOL
1
2
3
G
D
S
ORDERING INFORMATION
Part Number
CMT10N10N220
ABSOLUTE MAXIMUM RATINGS
D
S
G
N-Channel MOSFET
Package
TO-220
Rating
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
10
35
±20
±40
40
0.32
-55 to 150
69
3.13
100
260
Unit
A
V
V
W
W/
℃
℃
mJ
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25
℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 10A, L = 1.38mH, R
G
= 25
)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
E
AS
θ
JC
θ
JA
T
L
℃
/W
℃
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