參數(shù)資料
型號(hào)： CMT18N20N220
廠商： Electronic Theatre Controls, Inc.
英文描述： POWER FIELD EFFECT TRANSISTOR
中文描述： 功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 209K
代理商： CMT18N20N220
CMT18N20
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2001/11/01
Draft
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
FEATURES
!
Silicon Gate for Fast Switching Speeds
!
Low R
DS(on)
to Minimize On-Losses. Specified at Elevated
Temperature
!
Rugged – SOA is Power Dissipation Limited
!
Source-to-Drain Characterized for Use With Inductive
Loads
PIN CONFIGURATION
SYMBOL
TO-220
Front View
1
2
3
G
D
S
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT18N20N220
ABSOLUTE MAXIMUM RATINGS
Package
TO-220
Rating
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
18
72
±20
±40
125
1.00
-55 to 150
224
Unit
A
V
V
W
W/
℃
℃
mJ
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25
℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 18A, L = 1.38mH, R
G
= 25
)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) Pulse Width and frequency is limited by TJ(max) and thermal response
T
J
, T
STG
E
AS
θ
JC
θ
JA
T
L
1.00
62.5
260
℃
/W
℃
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