參數(shù)資料
型號： CMT18N20N220
廠商： Electronic Theatre Controls, Inc.
英文描述： POWER FIELD EFFECT TRANSISTOR
中文描述： 功率場效應晶體管
文件頁數(shù)： 2/7頁
文件大?。?/td> 209K
代理商： CMT18N20N220
CMT18N20
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2001/11/01
Draft
Champion Microelectronic Corporation
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
℃
.
CMT18N20
Typ
Characteristic
Symbol
V
(BR)DSS
Min
200
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μ
A)
Drain-Source Leakage Current
(V
DS
= Rated V
DSS
, V
GS
= 0 V)
(V
DS
= 0.8Rated V
DSS
, V
GS
= 0 V, T
J
= 125
℃
)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 10A) *
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 5.0 A)
Forward Transconductance (V
DS
= 50 V, I
D
= 10 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
DSS
0.025
1.0
100
mA
I
GSSF
nA
I
GSSR
100
nA
V
GS(th)
2.0
4.0
V
R
DS(on)
V
DS(on)
0.18
6.0
V
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
6.8
mhos
pF
pF
pF
1600
750
300
30
60
80
60
63
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
ns
ns
ns
ns
(V
DD
= 30 V, I
D
= 10 A,
V
GS
= 10 V,
R
G
= 4.7
) *
36
16
26
4.5
nC
nC
nC
(V
DS
= 0.8Rated V
DSS
, I
D
= Rated I
D
,
V
GS
= 10 V)*
nH
L
S
7.5
nH
V
SD
t
on
t
rr
1.5
V
ns
ns
**
450
(I
S
= Rated I
D
,
d
IS
/d
t
= 100A/μs)
* Pulse Test: Pulse Width
≦
300μs, Duty Cycle
≦
2%
** Negligible, Dominated by circuit inductance
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