參數(shù)資料
型號: CR05AS-4
英文描述: CR05AS-4 CR05AS-8 Datasheet 87K/MAR.20.03
中文描述: CR05AS - 4 CR05AS - 8數(shù)據(jù)87K/MAR.20.03
文件頁數(shù): 4/6頁
文件大?。?/td> 85K
代理商: CR05AS-4
Jan.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
2
10
–2
10
0
10
1
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
2 3 57
2 3 57
10
–1
10
2
2 3 57
2 3 57
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100μA
(T
j
= 25°C)
P
GM
= 0.1W
P
G(AV)
= 0.01W
V
GD
= 0.2V
I
FGM
= 0.1A
200
160
140
120
60
80
20
0
–40–20
160
20
80
140
120
40
100
180
0
60
40
100
# 1
# 2
I
GT
(25°C)
# 1 32μA
# 2 9μA
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
–40–20
160
20
80
140
120
0.2
0.5
0.9
0
60
40
100
TYPICAL EXAMPLE
DISTRIBUTION
1.5
0.5
1.0
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
θ
360°
θ
= 30° 60° 90°
180°
120°
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
A
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
G
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
2 3
10
0
5 710
1
2 3 5 710
2
2 3 5 710
3
10
3
7
5
3
2
T
TIME (s)
G
GATE CURRENT (mA)
GATE CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
1
G
j
G
j
10
1
2 3
10
–3
5 710
–2
2 3 5 710
–1
2 3 5 710
0
10
2
7
5
3
2
7
5
3
2
10
0
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
See
3
GATE CHARACTERISTICS
60
–20
–40
–60
0
20 40
80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
1
G
j
G
j
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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CR05AS-8-ET14 制造商:Renesas Electronics Corporation 功能描述: