參數(shù)資料
型號(hào): CR05AS-4
英文描述: CR05AS-4 CR05AS-8 Datasheet 87K/MAR.20.03
中文描述: CR05AS - 4 CR05AS - 8數(shù)據(jù)87K/MAR.20.03
文件頁數(shù): 6/6頁
文件大?。?/td> 85K
代理商: CR05AS-4
Jan.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
160
120
100
40
60
20
0
–40–20
160
20
80
140
120
80
140
0
60
40
100
TYPICAL EXAMPLE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
1
R
j
R
j
2 3
10
–1
5 710
0
2 3 5 710
1
2 3 5 710
2
120
0
80
100
40
60
20
T
j
= 125°C
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
1
B
G
)
B
G
)
2 3
10
0
5 710
1
2 3 5 710
2
2 3 5 710
3
120
0
80
100
40
60
20
# 1
# 2
TYPICAL EXAMPLE
# 1 I
GT
(25°C)= 10μA
# 2 I
GT
(25°C)= 66μA
T
j
= 125°C, R
GK
= 1k
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/μs)
1
B
B
60
–20
–40
–60
0
20 40
80 100120140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
TYPICAL
EXAMPLE
DISTRIBUTION
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
H
JUNCTION TEMPERATURE (°C)
T
j
= 25°C
I
H
(25°C) = 1mA
I
GT
(25°C) = 25μA
2 3
10
–1
5 710
0
2 3
5 710
1
2 3 5 710
2
500
0
200
300
400
100
# 1
# 2
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
1
H
G
)
H
G
)
# 1 13μA 1.6mA
# 2 59μA 1.8mA
TYPICAL EXAMPLE
I
GT
(25°C)
I
H
(1k
)
T
j
= 25°C
10
2
2
2 3
10
0
4 5 7 10
1
3 4 5 7 10
2
7
5
4
3
2
10
3
7
5
4
3
2
10
1
# 1
# 2
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (μs)
1
G
G
TYPICAL EXAMPLE
I
GT
(25°C)
# 1 10μA
# 2 66μA
T
j
= 25°C
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