參數(shù)資料
型號: CRCW12061001F100
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifiers
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 5/16頁
文件大?。?/td> 596K
代理商: CRCW12061001F100
MW4IC001NR4 MW4IC001MR4
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
905
50
35
15
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
I
I
I
I
V
DS
= 28 Vdc
P
out
= 0.9 W (PEP)
I
DQ
= 14 mA
TwoTone Measurement
100 kHz Tone Spacing
η
D
IRL
G
ps
IM3
17
19
21
23
25
27
29
31
33
46
42
38
34
30
26
22
18
14
10
900
895
890
885
880
875
870
865
860
855
60
55
50
45
40
35
30
25
20
15
15
0
P1dB
P
out
, OUTPUT POWER (WATTS)
Figure 4. CW Performance versus Output
Power
Gp
V
DS
= 28 Vdc
I
DQ
= 14 mA
f = 880 MHz
G
ps
14
13
12
11
10
9
8
7
6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
25
30
35
40
45
50
55
1
0.1
0.01
I
DQ
= 8 mA
12 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
I
I
10 mA
16 mA
14 mA
TwoTone Measurement
100 kHz Tone Spacing
18 mA
10
25
3rd Order
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
I
I
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz
f2 = 880.1 MHz
5th Order
7th Order
30
35
40
45
50
55
60
65
70
1
0.1
0.01
10
25
10 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 7. Third Order Intermodulation
Distortion versus Output Power
I
I
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz,
f2 = f1 + Tone Spacing
TwoTone Measurement
30
35
40
45
50
1
0.1
0.01
1 MHz
Tone
Spacing = 100 kHz
V
DS
= 28 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
TwoTone Measurement
100 kHz Tone Spacing
η
D
η
D
,
p
,
η
D
,
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