參數(shù)資料
型號(hào): CS5124
廠商: ZF Electronics Corporation
英文描述: High Performance, Integrated Current Mode PWM Controllers
中文描述: 高性能,集成電流模式PWM控制器
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 172K
代理商: CS5124
C
3
Electrical Characteristics: -40°C
T
J
125°C, -40°C
T
A
105°C, 7.60V
V
CC
20V, UVLO = 3.0V, I
SENSE
= 0V,
C
V(CC)
= 0.33μF, C
GATE
= 1nF (ESR = 10
), C
SS
= 470pF C
V(FB)
= 100pF
,
unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
V
CC
Clamp and BIAS Pin
V
CC
Clamp Voltage
CS5124 Only. Connect an NFET as follows: BIAS = G, V
CC
= S, V
IN
= D.
36V
V
IN
60V, 220nF
C
SS
500nF, R = 500k
Measure Voltage on BIAS with:
10V
V
CC
20V and 50μA
I
BIAS
1mA
With BIAS pin sinking 1mA
7.275
7.9
8.625
V
BIAS Minimum Voltage
1.6
2.8
4
V
BIAS Clamp
12
15
20
V
I
200kHz Oscillator
Operating Frequency
Max Duty Cycle Clamp
Slope Compensation
(Normal operation)
Slope Compensation
(Synchronized operation)
SYNC Input Threshold Voltage
SYNC Input Impedance
CS5126 Only
175
78
12
200
82.5
18
225
85
23
kHz
%
mV/μs
(Note 1)
7
1
50
12
2
120
16
3
230
mV/μs
V
k
Measured with SYNC = 1V &10V
I
400kHz Oscillator
Operating Frequency
Max Duty Cycle Clamp
Slope Compensation
CS5124 Only
360
80.0
15
400
82.5
21
440
85.0
26
kHz
%
mV/μs
I
Soft Start
Soft Start Charge Current
Soft Start Discharge Current
V
SS
Voltage when V
FB
Begins to Rise
Peak Soft Start Charge Voltage
Valley Soft Start Discharge Voltage
7
10
10.0
1.62
13
μA
mA
V
0.5
1.40
V
FB
= 300mV
1.80
4.7
200
4.9
275
V
400
mV
I
Current Sense
First Current Sense Threshold
Second Current Sense Threshold
I
SENSE
to GATE Prop. Delay
CS5124 Only
At max duty cycle.
170
250
60
195
275
90
215
315
130
mV
mV
ns
0 to 700mV pulse into I
SENSE
(after blanking time)
0 to 400mV pulse into I
SENSE
(Note 1)
Leading Edge Blanking Time
Internal Offset
90
130
60
180
ns
mV
I
Current Sense
First Current Sense Threshold
Second Current Sense
Threshold
I
SENSE
to GATE Prop. Delay
CS5126 Only
At max duty cycle
300
485
335
525
360
575
mV
mV
0 to 800mV pulse into I
SENSE
(after blanking time)
0 to 550mV pulse into I
SENSE
(Note 1)
60
90
130
ns
Leading Edge Blanking Time
Internal Offset
110
175
125
210
ns
mV
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