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參數(shù)資料
| 型號： | CY14E102N-ZSP45XIT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 |
| 封裝： | ROHS COMPLIANT, TSOP2-54 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大小： | 628K |
| 代理商： | CY14E102N-ZSP45XIT |
ADVANCE
CY14E102L, CY14E102N
2-Mbit (256K x 8/128K x 16) nvSRAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document Number: 001-45755 Rev. *A
Revised June 27, 2008
Features
■ 15 ns, 20 ns, 25 ns, and 45 ns access times
■ Internally organized as 256K x 8 (CY14E102L) or 128K x 16
(CY14E102N)
■ Hands off automatic STORE on power down with only a small
capacitor
■ STORE to QuantumTrap
nonvolatile elements initiated by
software, device pin, or AutoStore on power down
■ RECALL to SRAM initiated by software or power up
■ Infinite read, write, and recall cycles
■ 200,000 STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 5V +10% operation
■ Commercial and Industrial temperatures
■ 48-pin FBGA, 44 and 54-pin TSOP II packages
■ Pb-free and RoHS compliance
Functional Description
The Cypress CY14E102L/CY14E102N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 256K words of 8 bits each or 128K words of 16 bits
each.
The
embedded
nonvolatile
elements
incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data reside in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
Note
1. Address A0 - A17 and Data DQ0 - DQ7 for x8 configuration, Address A0 - A16 and Data DQ0 - DQ15 for x16 configuration.
A0 - A17
Address
WE
OE
CE
VCC
VSS
VCAP
DQ0 - DQ7
HSB
CY14E102L
BHE
BLE
Logic Block Diagram
CY14E102N
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| CY14E108L-BA45XCES | 制造商:Cypress Semiconductor 功能描述:NVSRAM 8MB 1024KX8 FBGA COMMERCIAL TEMP - Trays |
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| CY14E256LA-SZ25XI | 功能描述:NVRAM 32Kb x8 4.5-5.5V NVSRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14E256LA-SZ25XIT | 功能描述:NVRAM 32Kb x8 4.5-5.5V NVSRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14E256LA-SZ45XI | 功能描述:NVRAM 32Kb x8 4.5-5.5V NVSRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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