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參數(shù)資料
| 型號： | CY62137CV30LL-70BVXE |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, FBGA-48 |
| 文件頁數(shù)： | 13/13頁 |
| 文件大小： | 339K |
| 代理商： | CY62137CV30LL-70BVXE |
CY62137CV30/33 MoBL
CY62137CV MoBL
Document #: 38-05201 Rev. *G
Page 13 of 13
Document History Page
Document Title: CY62137CV30/33 MoBL
and CY62137CV MoBL
2-Mbit (128K x 16) Static RAM
Document Number: 38-05201
Orig. of
Change
**
112393
02/19/02
GAV
New Data Sheet (advance information)
*A
114015
04/25/02
JUI
Added BV package diagram
Changed from Advance Information to Preliminary
*B
117064
07/12/02
MGN
Changed from Preliminary to Final
*C
118122
09/10/02
MGN
Added new part number: CY62137CV with wider voltage (2.7V – 3.6V)
Added new SL power bin for new part number
For T
AA
= 55 ns, improved t
PWE
min. from 45 ns to 40 ns
For T
AA
= 70 ns, improved t
PWE
min. from 50 ns to 45 ns
For T
AA
= 70 ns, improved t
LZWE
min. from 5 ns to 10 ns
*D
118761
09/23/02
MGN
Improved Typ. I
CC
spec to 7 mA (for 55 ns) and 5.5 mA (for 70 ns)
Improved Max I
CC
spec to 15 mA (for 55 ns) and 12 mA (for 70 ns)
For T
AA
= 55 ns, improved t
LZWE
min. from 5 ns to 10 ns
Changed upper spec. for Supply Voltage to Ground Potential to V
CC(max)
+ 0.5V
Changed upper spec. for DC Voltage Applied to Outputs in High-Z State and DC
Input Voltage to V
CC
+ 0.3V
*E
343877
See ECN
PCI
Added Automotive Information in Operating Range, DC and Ordering Information
Table
*F
419237
See ECN
ZSD
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Updated the ordering information table and replaced the Package name column
with Package diagram
*G
486789
See ECN
VKN
Removed part number CY62137CV25 from the product offering
Updated the ordering information table
REV.
ECN NO.
Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62137CV33LL | 2-Mbit (128K x 16) Static RAM |
| CY62137CVSL | 2-Mbit (128K x 16) Static RAM |
| CY62137CVSL-70BAXI | 2-Mbit (128K x 16) Static RAM |
| CY62147EV18 | 4-Mbit (256K x 16) Static RAM |
| CY62147EV18LL-55BVXI | 4-Mbit (256K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62137CV30LL-70BVXET | 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62137CV30LL-70BVXI | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY62137CV33 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137CV33LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137CV33LL-55BAI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (128K x 16) Static RAM |
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