參數(shù)資料
型號： CY62137CV33LL
廠商： Cypress Semiconductor Corp.
英文描述： 2-Mbit (128K x 16) Static RAM
中文描述： 2兆位（128K的× 16）靜態(tài)RAM
文件頁數(shù)： 3/13頁
文件大?。?/td> 339K
代理商： CY62137CV33LL
CY62137CV30/33 MoBL
CY62137CV MoBL
Document #: 38-05201 Rev. *G
Page 3 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................-65°C to +150°C
Ambient Temperature with
Power Applied..............................................-55°C to +125°C
Supply Voltage to Ground Potential -0.5V to V
CC(max)
+ 0.5V
DC Voltage Applied to Outputs
in High-Z State
[5]
.................................... -0.5V to V
CC
+ 0.3V
DC Input Voltage
[5]
................................. -0.5V to V
CC
+ 0.3V
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature T
A
-40°C to +85°C 2.7V to 3.3V
V
CC
CY62137CV30
Industrial
CY62137CV33
3.0V to 3.6V
CY62137CV
2.7V to 3.6V
CY62137CV30 Automotive -40°C to +125°C 2.7V to 3.3V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
CY62137CV30-55
CY62137CV30-70
Unit
Min.
Typ.
[2]
Max.
Min. Typ.
[2]
Max.
V
OH
Output HIGH Voltage
I
OH
= -1.0 mA
V
CC
= 2.7V
2.4
2.4
V
V
OL
Output LOW Voltage
I
OL
= 2.1 mA
V
CC
= 2.7V
0.4
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+0.3
2.2
V
CC
+0.3
V
V
IL
Input LOW Voltage
-0.3
0.8
-0.3
0.8
V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
Ind’l
-1
+1
-1
+1
μ
A
Auto
-2
+2
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
,
Output Disabled
Ind’l
-1
+1
-1
+1
μ
A
Auto
-2
+2
I
CC
V
CC
Operating
Supply Current
f = f
Max
= 1/t
RC
V
CC
= 3.3V
I
OUT
= 0mA
CMOS Levels
Ind’l
7
15
5.5
12
mA
Auto
5.5
15
f = 1 MHz
Ind’l
1.5
3
1.5
3
Auto
1.5
3
I
SB1
Automatic CE
Power-down
Current — CMOS Inputs
CE > V
CC
– 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
Max
(Address and Data only),
f=0 (OE, WE, BHE and BLE)
Ind’l
2
10
2
10
μ
A
Auto
2
15
I
SB2
Automatic CE
Power-down
Current — CMOS Inputs
CE > V
CC
– 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
f = 0, V
CC
= 3.3V
Ind’l
2
10
2
10
μ
A
Auto
2
15
Note:
5. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
[+] Feedback
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