參數(shù)資料
型號(hào)： CY62256LL-55SNI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 256K (32K x 8) Static RAM
中文描述： 32K X 8 STANDARD SRAM, 55 ns, PDSO28
封裝： 0.300 INCH, SOIC-28
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 394K
代理商： CY62256LL-55SNI
CY62256
Document #: 38-05248 Rev. *C
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied..............................................-55
°
C to +125
°
C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14)...........................................–0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[3]
.................................–0.5V to V
CC
+ 0.5V
Electrical Characteristics
Over the Operating Range
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Automotive
Ambient Temperature (T
A
)
[4]
0
°
C to +70
°
C
–40
°
C to +85
°
C
–40
°
C to +125
°
C
V
CC
5V
±
10%
5V
±
10%
5V
±
10%
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
CY62256
55
Min. Typ.
[2]
2.4
CY62256
70
Min. Typ.
[2]
2.4
Unit
V
V
V
Max.
Max.
V
CC
= Min., I
OH
=
1.0 mA
V
CC
= Min., I
OL
= 2.1 mA
0.4
V
CC
+0.5V
0.8
+0.5
+0.5
55
0.4
V
CC
+0.5V
0.8
+0.5
+0.5
55
2.2
2.2
V
IL
I
IX
I
OZ
I
CC
Input LOW Voltage
Input Leakage Current
Output Leakage Current GND < V
O
< V
CC
, Output Disabled
V
CC
Operating Supply
Current
f = f
MAX
= 1/t
RC
–0.5
–0.5
–0.5
–0.5
–0.5
–0.5
V
μ
A
μ
A
mA
GND < V
I
< V
CC
V
CC
= Max., I
OUT
= 0 mA,
28
28
L
LL
25
25
0.5
0.4
0.3
1
2
0.1
0.1
0.1
50
50
2
0.6
0.5
5
50
5
10
15
25
25
0.5
0.4
0.3
1
2
0.1
0.1
50
50
2
0.6
0.5
5
50
5
10
mA
mA
mA
mA
mA
mA
μ
A
μ
A
μ
A
μ
A
I
SB1
Automatic CE
Power-down Current—
TTL Inputs
Max. V
CC
, CE > V
IH
,
V
IN
> V
IH
or V
IN
< V
IL
, f =
f
MAX
L
LL
I
SB2
Automatic CE
Power-down Current—
CMOS Inputs
Max. V
CC
, CE > V
CC
0.3V
V
IN
> V
CC
0.3V, or V
IN
<
0.3V, f = 0
L
LL
LL - Ind’l
LL -
Auto
Capacitance
[5]
Parameter
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
6
8
Unit
pF
pF
C
IN
C
OUT
Notes:
3.
4.
5.
Input Capacitance
Output Capacitance
V
IL
(min.)
=
2.0V for pulse durations of less than 20 ns.
T
is the “Instant-On” case temperature.
Tested initially and after any design or process changes that may affect these parameters.
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