參數(shù)資料
型號(hào)： CY7C028V-20ACT
廠(chǎng)商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： SRAM
英文描述： 3.3V 32K/64K x 16/18 Dual-Port Static RAM
中文描述： 64K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
封裝： PLASTIC, MS-026, TQFP-100
文件頁(yè)數(shù)： 3/22頁(yè)
文件大小： 635K
代理商： CY7C028V-20ACT
CY7C027V/027AV/028V
CY7C037AV/038V
Document #: 38-06078 Rev. *D
Page 11 of 22
Notes
28. R/W must be HIGH during all address transitions.
29. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM and a LOW UB or LB.
30. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
31. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on
the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tPWE.
32. To access RAM, CE = VIL, SEM = VIH.
33. To access upper byte, CE = VIL, UB = VIL, SEM = VIH.
To access lower byte, CE = VIL, LB = VIL, SEM = VIH.
34. Transition is measured
500 mV from steady state with a 5 pF load (including scope and jig). This parameter is sampled and not 100% tested.
35. During this period, the I/O pins are in the output state, and input signals must not be applied.
36. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high impedance state.
Switching Waveforms(continued)
tAW
tWC
tPWE
tHD
tSD
tHA
CE
R/W
OE
DATAOUT
DATA IN
ADDRESS
tHZOE
tSA
tHZWE
tLZWE
Figure 7. Write Cycle No. 1: R/W Controlled Timing[28, 29, 30, 31]
NOTE 35
tAW
tWC
tSCE
tHD
tSD
tHA
CE
R/W
DATA IN
ADDRESS
tSA
Figure 8. Write Cycle No. 2: CE Controlled Timing[28, 29, 30, 36]
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