參數(shù)資料
型號: CY7C09569V
英文描述: Memory
中文描述: 內(nèi)存
文件頁數(shù): 16/20頁
文件大?。?/td> 301K
代理商: CY7C09569V
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Document #: 38-06051 Rev. *A
Page 5 of 20
Maximum Ratings [10]
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied.............................................–55
°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to VCC+0.5V
DC Input Voltage[11] .................................–0.5V to VCC+0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
Latch-Up Current .................................................... >200 mA
Notes:
10. The Voltage on any input or I/O pin can not exceed the power pin during power-up.
11. Pulse width < 20 ns.
12. Industrial parts are available in CY7C007AV and CY7C017AV only.
Selection Guide
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
-20
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
-25
Maximum Access Time (ns)
20
25
Typical Operating Current (mA)
120
115
Typical Standby Current for ISB1 (mA)
(Both Ports TTL level)
35
30
Typical Standby Current for ISB3 (A)
(Both Ports CMOS level)
10
A
10
A
Pin Definitions
Left Port
Right Port
Description
CEL
CER
Chip Enable
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
A0L–A14L
A0R–A14R
Address (A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices; A0–A14 for 32K)
I/O0L–I/O8L
I/O0R–I/O8R
Data Bus Input/Output (I/O0–I/O7 for x8 devices and I/O0–I/O8 for x9)
SEML
SEMR
Semaphore Enable
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
M/S
Master or Slave Select
VCC
Power
GND
Ground
NC
No Connect
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
°C to +70°C
3.3V
± 300 mV
Industrial[12]
–40
°C to +85°C
3.3V
± 300 mV
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