參數(shù)資料
型號: CY7C1061AV33-12ZI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 1M x 16 Static RAM
中文描述: 1M X 16 STANDARD SRAM, 12 ns, PDSO54
封裝: TSOP2-54
文件頁數(shù): 6/11頁
文件大小: 269K
代理商: CY7C1061AV33-12ZI
PRELIMINARY
CY7C1061AV25
Document #: 38-05331 Rev. **
Page 6 of 11
Notes:
12. Address valid prior to or coincident with CE
transition LOW and CE
2
transition HIGH.
13. Data I/O is high-impedance if OE or BHE and/or BLE = V
.
14. If CE
goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
15. CE is a shorthand combination of both CE
1
and CE
2
combined. It is active LOW.
Switching Waveforms
(continued)
Read
Cycle
No. 2
(OEControlled)
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZBE
t
PD
HIGH
OE
CE
1
ICC
I
IMPEDANCE
ADDRESS
DATA OUT
V
SUPPLY
CURRENT
t
DBE
t
LZBE
t
HZCE
BHE, BLE
[11, 12]
I
SB
CE
2
Write Cycle No. 1 (CE Controlled)
t
HD
t
SD
t
SCE
t
SA
t
HA
t
AW
t
PWE
t
WC
BW
DATAI/O
ADDRESS
CE
WE
BHE, BLE
[13, 14, 15]
t
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