參數(shù)資料
型號(hào)： CY7C1061BV33-10ZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 16-Mbit (1M x 16) Static RAM
中文描述： 1M X 16 STANDARD SRAM, 10 ns, PDSO54
封裝： TSOP2-54
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 301K
代理商： CY7C1061BV33-10ZC
CY7C1061BV33
Document #: 38-05693 Rev. *B
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[3]
–0.5V to +4.6VDC
Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Electrical Characteristics
Over the Operating Range
DC Input Voltage
[3]
................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Selection Guide
–10
10
275
275
50
–12
12
260
260
50
Unit
ns
mA
Maximum Access Time
Maximum Operating Current
Commercial
Industrial
Commercial/Industrial
Maximum CMOS Standby Current
mA
Operating Range
Range
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
Commercial
Industrial
3.3V
±
0.3V
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Test Conditions
–10
–12
Unit
V
V
V
V
μ
A
μ
A
mA
mA
mA
Min.
2.4
Max.
Min.
2.4
Max.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[3]
Input Leakage Current
Output Leakage Current
V
CC
Operating
Supply Current
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
0.4
0.4
2.0
–0.3
–1
–1
V
CC
+ 0.3
0.8
+1
+1
275
275
70
2.0
–0.3
–1
–1
V
CC
+ 0.3
0.8
+1
+1
260
260
70
GND < V
I
< V
CC
GND < V
OUT
< V
CC
, Output Disabled
V
CC
= Max.,
f = f
MAX
= 1/t
RC
Commercial
Industrial
I
SB1
Automatic CE
Power-down Current
—TTL Inputs
Automatic CE
Power-down Current
—CMOS Inputs
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
I
SB2
Max. V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Commercial/
Industrial
50
50
mA
Capacitance
[4]
Parameter
Description
Test Conditions
Max.
6
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
I/O Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= 3.3V
Thermal Resistance
[4]
Parameter
Θ
JA
Θ
JC
Description
Test Conditions
54-pin TSOP-II
49.95
3.34
Unit
°
C/W
°
C/W
Thermal Resistance (Junction to Ambient) Test conditions follow standard test
Thermal Resistance (Junction to Case)
methods and procedures for
measuring thermal impedance, per
EIA/JESD51.
Notes:
3. V
(min.) = –2.0V and V
(max) = V
+ 0.5V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1061BV33-10ZXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1061BV33-8ZC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 16M-Bit 1M x 16 8ns 54-Pin TSOP-II 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3.3V 16MBIT 1MX16 8NS 54TSOP-II - Bulk 制造商:Rochester Electronics LLC 功能描述:16MB- (1MX16) FAST ASYNCH SRAM 3.3V TSOP II 54 - Bulk
CY7C1061BV33-8ZXC 制造商:Cypress Semiconductor 功能描述:1M x 16 CPG Fast Async SRAM 制造商:Cypress Semiconductor 功能描述:16MB- (1MX16) FAST ASYNCH SRAM 3.3V TSOP II 54 - Bulk
CY7C1061BV33-8ZXCT 制造商:Cypress Semiconductor 功能描述:16MB- (1MX16) FAST ASYNCH SRAM 3.3V TSOP II 54 - Tape and Reel
CY7C1061BV33-8ZXI 功能描述:IC SRAM 16MBIT 8NS 54TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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