參數(shù)資料
型號: CY7C1061BV33-10ZXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 16-Mbit (1M x 16) Static RAM
中文描述: 1M X 16 STANDARD SRAM, 10 ns, PDSO54
封裝: LEAD FREE, TSOP2-54
文件頁數(shù): 5/9頁
文件大小: 301K
代理商: CY7C1061BV33-10ZXI
CY7C1061BV33
Document #: 38-05693 Rev. *B
Page 5 of 9
Read Cycle No. 2 (OE Controlled)
[13, 14]
Write Cycle No. 1 (CE Controlled)
[15, 16]
Notes:
14.Address valid prior to or coincident with CE transition LOW.
15.Data I/O is high-impedance if OE or BHE and/or BLE = V
.
16.If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Switching Waveforms
(continued)
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZBE
t
PD
HIGH
OE
CE
ICC
I
IMPEDANCE
ADDRESS
DATA OUT
V
SUPPLY
CURRENT
t
DBE
t
LZBE
t
HZCE
BHE, BLE
I
SB
t
HD
t
SD
t
SCE
t
SA
t
HA
t
AW
t
PWE
t
WC
BW
DATAI/O
ADDRESS
CE
WE
BHE, BLE
t
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