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參數(shù)資料
| 型號(hào)： | CY7C1161V18-300BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| 中文描述： | 2M X 8 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FPBGA-165 |
| 文件頁數(shù)： | 29/29頁 |
| 文件大小： | 659K |
| 代理商： | CY7C1161V18-300BZXC |
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CY7C1161V18, CY7C1176V18
CY7C1163V18, CY7C1165V18
Document Number: 001-06582 Rev. *D
Page 9 of 29
Depth Expansion
The CY7C1163V18 has a port select input for each port. This
enables easy depth expansion. Both port selects are only
sampled on the rising edge of the positive input clock (K). Each
port select input can deselect the specified port. Deselecting a
port does not affect the other port. All pending transactions (read
and write) are completed before the device is deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to enable the SRAM to adjust its output
driver impedance. The value of RQ must be 5X the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175
Ω and 350Ω, with V
DDQ =1.5V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the QDR-II+ to simplify data capture
on high speed systems. Two echo clocks are generated by the
QDR-II+. CQ is referenced with respect to K and CQ is refer-
enced with respect to K. These are free running clocks and are
synchronized to the input clock of the QDR-II+. The timings for
the echo clocks are shown in the AC timing table.
Valid Data Indicator (QVLD)
QVLD is provided on the QDR-II+ to simplify data capture on high
speed systems. The QVLD is generated by the QDR-II+ device
along with data output. This signal is also edge-aligned with the
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
DLL
These chips utilize a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. The DLL may be disabled by applying ground to the
erations in QDRII/DDRII/QDRII+/DDRII+.” The DLL can also be
reset by slowing or stopping the input clocks K and K for a
minimum of 30 ns. However, it is not necessary for the DLL to be
reset in order to lock to the desired frequency. During power up
when the DOFF is tied HIGH, the DLL is locked after 2048 cycles
of stable clock.
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| CY7C1161V18 | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1168V18-333BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1168V18-333BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
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| CY7C1163KV18-400BZI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1163KV18-450BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 450MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1163KV18-550BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 550MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C11651KV18-400BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 QDR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C11651KV18-400BZXC | 功能描述:IC SRAM 18MBIT 400MHZ 165-FPBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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