- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295374 > CY7C1161V18 (Cypress Semiconductor Corp.) 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) PDF資料下載
參數(shù)資料
| 型號： | CY7C1161V18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| 中文描述： | 18兆位的國防評估報(bào)告⑩- II SRAM的4字突發(fā)架構(gòu)（2.5周期讀寫延遲） |
| 文件頁數(shù)： | 27/29頁 |
| 文件大小： | 956K |
| 代理商： | CY7C1161V18 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當(dāng)前第27頁第28頁第29頁
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document Number: 001-06582 Rev. *C
Page 7 of 29
CQ
Echo Clock
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input
clock (K) of the QDR-II+. The timings for the echo clocks are shown in “Switching Characteristics”
on page 23.
ZQ
Input
Output Impedance Matching Input. Used to tune the device outputs to the system data bus
impedance. CQ, CQ and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin is connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left uncon-
nected.
DOFF
Input
DLL Turn Off
Active LOW. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned-off operation are different from those listed in this data sheet. For normal
operation, this pin is connected to a pull up through a 10 K
or less pull up resistor. The device
behaves in QDR-I mode when the DLL is turned off. In this mode, the device operates at a frequency
of up to 167 MHz with QDR-I timing.
TDO
Output
TDO for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/36M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and
AC measurement points.
VDD
Power Supply Power supply inputs to the core of the device.
VSS
Ground
Ground for the device.
VDDQ
Power Supply Power supply inputs for the outputs of the device.
Pin Definitions (continued)
Pin Name
IO
Pin Description
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1168V18-333BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1168V18-333BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1163KV18-400BZI | 功能描述:靜態(tài)隨機(jī)存取存儲器 18MB (1Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1163KV18-450BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 18MB (1Mx18) 1.8v 450MHz DDR II 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1163KV18-550BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 18MB (1Mx18) 1.8v 550MHz DDR II 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C11651KV18-400BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 Sync 靜態(tài)隨機(jī)存取存儲器 QDR RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C11651KV18-400BZXC | 功能描述:IC SRAM 18MBIT 400MHZ 165-FPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。