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參數(shù)資料
| 型號： | CY7C1347G-133BGXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (128K x 36) Pipelined Sync SRAM |
| 中文描述： | 128K X 36 CACHE SRAM, 4 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, LEAD FREE, BGA-119 |
| 文件頁數(shù)： | 8/21頁 |
| 文件大?。?/td> | 841K |
| 代理商： | CY7C1347G-133BGXC |
CY7C1347G
Document #: 38-05516 Rev. *E
Page 8 of 21
Truth Table
The truth table for CY7C1347G follows.
[2, 3, 4, 5, 6]
Next Cycle
Add.
Used
CE
1
CE
2
CE
3
ZZ
ADSP ADSC ADV WRITE
OE
CLK
DQ
Deselect Cycle, Power Down
None
H
X
X
L
X
L
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
H
L
X
X
X
L-H
Tri-State
Snooze Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H
Tri-State
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H
Tri-State
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
Tri-State
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Notes:
2. X = “Do Not Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write Enable signals (BW
A
, BW
B
, BW
C
, BW
D
) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals
(BW
, BW
, BW
, BW
), BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
[+] Feedback
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| CY7C1347G-133BGXCT | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V COM Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1347G-133BGXIT | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V IND Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1347G-133BZC | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V COM Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1347G-133BZXC | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V COM Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1347G-166AXC | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V COM Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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