參數(shù)資料
型號： CY7C1362B-200BZI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 9-Mbit (256K x 36/512K x 18) Pipelined SRAM
中文描述： 512K X 18 CACHE SRAM, 3 ns, PBGA165
封裝： 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
文件頁數(shù)： 23/34頁
文件大?。?/td> 895K
代理商： CY7C1362B-200BZI
CY7C1360B
CY7C1362B
Document #: 38-05291 Rev. *C
Page 23 of 34
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND........–0.5V to +4.6V
DC Voltage Applied to Outputs
in Three-State ..................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
V
DD
V
DDQ
3.3V
– 5%/+10% 2.5V – 5%
to
V
DD
Electrical Characteristics
Over the Operating Range
[13, 14]
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
2.625
Unit
V
V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 1.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
≤
V
I
≤
V
DDQ
V
OH
Output HIGH Voltage
V
V
V
V
V
V
V
V
μ
A
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
[13]
2.0
1.7
–0.3
–0.3
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[13]
I
X
Input Load Current
except ZZ and MODE
Input Current of MODE Input = V
SS
–30
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
5
Input Current of ZZ
–5
30
5
250
220
180
50
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
Current
f = f
MAX
= 1/t
CYC
–5
V
DD
= Max., I
OUT
= 0 mA,
4.4-ns cycle, 225 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speeds
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
f = f
MAX
= 1/t
CYC
V
DD
= Max, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
V
DD
= Max, Device Deselected, or
V
IN
≤
0.3V or V
IN
> V
DDQ
– 0.3V
f = f
MAX
= 1/t
CYC
V
DD
= Max, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
I
SB2
All speeds
30
mA
I
SB3
All speeds
50
mA
I
SB4
All Speeds
40
mA
Shaded areas contain advance information.
Notes:
13.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC) > –2V (Pulse width less than t
CYC
/2).
14.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
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