參數(shù)資料
型號: CY7C1362B-225BGC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 9-Mbit (256K x 36/512K x 18) Pipelined SRAM
中文描述: 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
文件頁數(shù): 20/34頁
文件大?。?/td> 895K
代理商: CY7C1362B-225BGC
CY7C1360B
CY7C1362B
Document #: 38-05291 Rev. *C
Page 20 of 34
Identification Register Definitions
Instruction Field
CY7C1360B
(256KX36)
CY7C1362B
(512KX18)
Description
Revision Number (31:29)
001
001
Describes the version number
Device Depth (28:24)
01010
01010
Reserved for Internal Use
Device Width (23:18)
000000
000000
Defines memory type and architecture
Cypress Device ID (17:12)
100110
010110
Defines width and density
Cypress JEDEC ID Code (11:1)
00000110100
00000110100
Allows unique identification of SRAM vendor
ID Register Presence Indicator (0)
1
1
Indicates the presence of an ID register
Scan Register Sizes
Register Name
Bit Size(x36)
Bit Size(x18)
Instruction
3
3
Bypass
1
1
ID
32
32
Boundary Scan Order
71
71
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload
function and is therefore not 1149.1 compliant.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
相關PDF資料
PDF描述
CY7C1362B-225AC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM
CY7C1362B Plastic Connector Backshell; Enclosure Material:Plastic; Enclosure Color:Beige; Leaded Process Compatible:No; No. of Positions:26; Peak Reflow Compatible (260 C):No RoHS Compliant: No
CY7C43686AV-15AC 3.3V 1K 4K 16K x 36 x 18 x 2 Tri Bus FIFO
CY7C43686AV-7AC 3.3V 1K 4K 16K x 36 x 18 x 2 Tri Bus FIFO
CY7C43686AV-10AI 3.3V 1K 4K 16K x 36 x 18 x 2 Tri Bus FIFO
相關代理商/技術參數(shù)
參數(shù)描述
CY7C1362C-166AJXC 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V COM Sync PL 1CD 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1362C-166AJXCT 功能描述:IC SRAM 9MBIT 166MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1362C-166AXC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 3.5ns 100-Pin TQFP
CY7C1362C-166BZC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1362C-200AJXC 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V COM Sync PL 1CD 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray