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參數資料
| 型號： | CY7C1362B-225BGI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | BACKSHELL, MDR 68 WAY METALBACKSHELL, MDR 68 WAY METAL; Material:Aluminum; Ways, No. of:68; Colour:Steel |
| 中文描述： | 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
| 文件頁數： | 18/34頁 |
| 文件大小： | 895K |
| 代理商： | CY7C1362B-225BGI |
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CY7C1360B
CY7C1362B
Document #: 38-05291 Rev. *C
Page 18 of 34
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction will have the
same effect as the Pause-DR command.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
TAP AC Switching Characteristics
Over the Operating Range
[10, 11]
Parameter
Clock
t
TCYC
t
TF
t
TH
t
TL
Output Times
t
TDOV
t
TDOX
Set-up Times
t
TMSS
t
TDIS
t
CS
Hold Times
t
TMSH
t
TDIH
t
CH
Notes:
10.t
and t
refer to the set-up and hold time requirements of latching data from the boundary scan register.
11. Test conditions are specified using the load in TAP AC test Conditions. t
R
/t
F
= 1ns.
Description
Min.
Max.
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
ns
20
25
25
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
5
ns
ns
0
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
5
5
5
ns
ns
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
ns
ns
ns
tTL
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTH
Test Data-Out
(TDO)
tCYC
Test Data-In
(TDI)
tTMSH
tTMSS
tTDIH
tTDIS
tTDOX
tTDOV
DON’T CARE
UNDEFINED
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1362B-225BZI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-200BZI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-200BZC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-200BGI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-225AJC | BACKSHELL, MDR, 50WAY, METAL; For use with:Mini D Ribbon 101XX-6000 EC Plug Connectors; Material:Aluminum; Colour:Nickel; Connector type:Backshell; Ways, No. of:50 RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1362C-166AJXC | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V COM Sync PL 1CD 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1362C-166AJXCT | 功能描述:IC SRAM 9MBIT 166MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1362C-166AXC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 3.5ns 100-Pin TQFP |
| CY7C1362C-166BZC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1362C-200AJXC | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V COM Sync PL 1CD 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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