參數資料
型號： CY7C1380BV25
廠商： Cypress Semiconductor Corp.
英文描述： 512K x 36 / 1 Mb x 18 Pipelined SRAM
中文描述： 為512k × 36 / 1字節(jié)× 18流水線的SRAM
文件頁數： 17/30頁
文件大小： 860K
代理商： CY7C1380BV25
CY7C1380BV25
CY7C1382BV25
PRELIMINARY
17
Identification Register Definitions
Instruction Field
Revision Number
(31:28)
Device Depth
(27:23)
Device Width
(22:18)
Cypress Device ID
(17:12)
Cypress JEDEC ID
(11:1)
ID Register Presence
(0)
512K x 36
xxxx
1 Mb x 18
xxxx
Description
Reserved for version number.
00111
01000
Defines depth of SRAM. 512K or 1 Mb
00100
00011
Defines with of the SRAM. x36 or x18
xxxxx
xxxxx
Reserved for future use.
00011100100
00011100100
Allows unique identification of SRAM vendor.
1
1
Indicate the presence of an ID register.
Scan Register Sizes
Register Name
Bit Size (x18)
Bit Size (x36)
Instruction
3
3
Bypass
1
1
ID
32
32
Boundary Scan
70
51
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures the Input/Output ring contents. Places the boundary scan register
between the TDI and TDO. Forces all SRAM outputs to High-Z state. This
instruction is not 1149.1 compliant.
Loads the ID register with the vendor ID code and places the register be-
tween TDI and TDO. This operation does not affect SRAM operation.
Captures the Input/Output contents. Places the boundary scan register be-
tween TDI and TDO. Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures the Input/Output ring contents. Places the boundary scan register
between TDI and TDO. Does not affect the SRAM operation. This instruction
does not implement 1149.1 preload function and is therefore not 1149.1
compliant.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
IDCODE
001
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
相關PDF資料
PDF描述
CY7C1380BV25-133AC 512K x 36 / 1 Mb x 18 Pipelined SRAM
CY7C1380BV25-150AC 512K x 36 / 1 Mb x 18 Pipelined SRAM
CY7C1380BV25-150BGC 512K x 36 / 1 Mb x 18 Pipelined SRAM
CY7C1380BV25-166AC 512K x 36 / 1 Mb x 18 Pipelined SRAM
CY7C1380BV25-166BGC 512K x 36 / 1 Mb x 18 Pipelined SRAM
相關代理商/技術參數
參數描述
CY7C1380BV25-200AC 制造商:Cypress Semiconductor 功能描述:
CY7C1380C-133AC 功能描述:IC SRAM 18MBIT 133MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤
CY7C1380C-150AC 制造商:Cypress Semiconductor 功能描述:16MB (512KX36) 3.3V SYNC-PIPE (SINGLE CYCLE DESELECT) SRAM - Bulk
CY7C1380C-167AC 功能描述:IC SRAM 18MBIT 167MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤
CY7C1380C-167BGC 制造商:Cypress Semiconductor 功能描述:
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