參數(shù)資料
型號: CY7C1383C-117AI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
中文描述: 1M X 18 STANDARD SRAM, 7.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁數(shù): 26/36頁
文件大小: 564K
代理商: CY7C1383C-117AI
CY7C1381C
CY7C1383C
Document #: 38-05238 Rev. *B
Page 26 of 36
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND........–0.3V to +4.6V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C 3.3V
– 5%/+10% 2.5V – 5%
-40°C to +85°C
V
DD
V
DDQ
to
V
DD
Electrical Characteristics
Over the Operating Range
[12, 13]
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
2.625
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 1.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
V
I
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
[12]
2.0
1.7
–0.3
–0.3
–5
–30
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[12]
I
X
Input Load
Input Current of MODE Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
30
Input Current of ZZ
–30
30
5
-300
I
OZ
I
OS
Output Leakage Current GND
V
I
V
DD,
Output Disabled
Output Short Circuit
Current
V
DD
Operating Supply
Current
f = f
MAX
= 1/t
CYC
–5
V
DD
= Max., V
OUT
= GND
I
DD
V
DD
= Max., I
OUT
= 0 mA,
7.5-ns cycle, 133 MHz
8.8-ns cycle, 117 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
8.8-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
210
190
175
120
110
100
70
mA
mA
mA
mA
mA
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = f
MAX,
inputs switching
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V,
f = 0, inputs static
Max. V
DD
, Device Deselected,
V
IN
V
DDQ
– 0.3V or V
IN
0.3V,
f = f
MAX
, inputs switching
mA
I
SB3
7.5-ns cycle, 133 MHz
8.8-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All Speeds
105
100
95
80
mA
mA
mA
mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V,
f = 0, inputs static
Notes:
12.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC) > -2V (Pulse width less than t
CYC
/2).
13.T
Power-up
: Assumes a linear ramp from 0v to V
DD
(min.) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
相關(guān)PDF資料
PDF描述
CY7C1383C-117BGC 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1383C-117BGI 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1383C-117BZC 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1383C-117BZI 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381C-100BZI CAPACITOR, CHIP, CERAMIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1383D-100AXC 功能描述:IC SRAM 18MBIT 100MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
CY7C1383D-100AXCT 功能描述:IC SRAM 18MBIT 100MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1383D-133AXC 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mx18 3.3V COM Sync FT 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1383D-133AXCKJ 制造商:Cypress Semiconductor 功能描述:
CY7C1383D-133AXCT 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mx18 3.3V COM Sync FT 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray