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參數(shù)資料
| 型號： | CY7C1412BV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| 中文描述： | 的36 - Mbit QDR - II型⑩SRAM的2字突發(fā)結(jié)構(gòu) |
| 文件頁數(shù)： | 10/26頁 |
| 文件大?。?/td> | 1072K |
| 代理商： | CY7C1412BV18 |
PRELIMINARY
CY7C1410BV18
CY7C1425BV18
CY7C1412BV18
CY7C1414BV18
Document #: 001-07036 Rev. *B
Page 10 of 26
Write Cycle Descriptions
(CY7C1410BV18 and CY7C1412BV18)
[2, 8]
BWS
0
/
NWS
0
L
BWS
1
/
NWS
1
L
K
K
–
Comments
L-H
During the Data portion of a Write sequence
:
CY7C1410BV18
both nibbles (D
[7:0]
) are written into the device,
CY7C1412BV18
both bytes (D
[17:0]
) are written into the device.
During the Data portion of a Write sequence
:
CY7C1410BV18
both nibbles (D
[7:0]
) are written into the device,
CY7C1412BV18
both bytes (D
[17:0]
) are written into the device.
During the Data portion of a Write sequence
:
CY7C1410BV18
only the lower nibble (D
[3:0]
) is written into the device.
D
[7:4]
will remain unaltered,
CY7C1412BV18
only the lower byte (D
[8:0]
) is written into the device.
D
[17:9]
will remain unaltered.
During the Data portion of a Write sequence
:
CY7C1410BV18
only the lower nibble (D
[3:0]
) is written into the device.
D
[7:4]
will remain unaltered,
CY7C1412BV18
only the lower byte (D
[8:0]
) is written into the device.
D
[17:9]
will remain unaltered.
During the Data portion of a Write sequence
:
CY7C1410BV18
only the upper nibble (D
[7:4]
) is written into the device.
D
[3:0]
will remain unaltered,
CY7C1412BV18
only the upper byte (D
[17:9]
) is written into the device.
D
[8:0]
will remain unaltered.
During the Data portion of a Write sequence
:
CY7C1410BV18
only the upper nibble (D
[7:4]
) is written into the device.
D
[3:0]
will remain unaltered,
CY7C1412BV18
only the upper byte (D
[17:9]
) is written into the device.
D
[8:0]
will remain unaltered.
No data is written into the devices during this portion of a Write operation.
No data is written into the devices during this portion of a Write operation.
L
L
–
L-H
L
H
L-H
–
L
H
–
L-H
H
L
L-H
–
H
L
–
L-H
H
H
H
H
L-H
–
–
L-H
Write Cycle Descriptions
(CY7C1425BV18)
[2, 8]
BWS
0
L
K
K
–
Comments
L-H
During the Data portion of a Write sequence
:
CY7C1425BV18 - the single byte (D[8:0]) is written into the device
During the Data portion of a Write sequence
:
CY7C1425BV18 - the single byte (D[8:0]) is written into the device
No data is written into the devices during this portion of a Write operation.
No data is written into the devices during this portion of a Write operation.
L
–
L-H
H
H
L-H
–
–
L-H
Note:
8. Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. NWS
0
, NWS
1
, BWS
0
, BWS
1
, BWS
2
and BWS
3
can be altered on different
portions of a Write cycle, as long as the set-up and hold requirements are achieved.
[+] Feedback
相關PDF資料 |
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|---|---|
| CY7C1412BV18-167BZI | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1412BV18-167BZXI | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1414BV18 | 36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1412BV18-167BZC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 QDR II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1412BV18-167BZXI | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 QDR II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1412BV18-200BZC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 QDR II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1412BV18-200BZI | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 QDR-II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1412BV18-200BZXC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 QDR-II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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