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參數(shù)資料
| 型號： | CY7C1512V18-278BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| 中文描述： | 4M X 18 QDR SRAM, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 11/27頁 |
| 文件大?。?/td> | 458K |
| 代理商： | CY7C1512V18-278BZC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
Page 11 of 27
H
H
H
L
L-H
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written into
the device. D
[26:0]
will remain unaltered.
L-H During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written into
the device. D
[26:0]
will remain unaltered.
-
No data is written into the device during this portion of a write operation.
H
H
H
L
-
H
H
H
H
L-H
H
H
H
H
-
L-H No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
(CY7C1525V18)
BWS
0
L
K
K
–
Comments
L-H
During the Data portion of a Write sequence
:
CY7C1525V18
the single byte (D
[8:0]
) is written into the device
During the Data portion of a Write sequence
:
CY7C1525V18
the single byte (D
[8:0]
) is written into the device,
No data is written into the devices during this portion of a write operation.
L
–
L-H
H
L-H
–
H
–
L-H
No data is written into the devices during this portion of a write operation.
Write Cycle Descriptions
(CY7C1514V18) (continued)
[3, 9]
BWS
0
BWS
1
BWS
2
BWS
3
K
K
Comments
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相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1512V18-278BZI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-278BZXC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-278BZXI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-300BZC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-300BZI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1512V18-300BZC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Bulk |
| CY7C1512YC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1513AV18-167BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1513AV18-200BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1513AV18-200BZI | 功能描述:靜態(tài)隨機存取存儲器 4Mx18 1.8V QDR-II (4-Word Burst) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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