- 您現在的位置：買賣IC網 > PDF目錄170347 > CY7C188-35VC (CYPRESS SEMICONDUCTOR CORP) 32K X 9 STANDARD SRAM, 35 ns, PDSO32 PDF資料下載
參數資料
| 型號： | CY7C188-35VC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 32K X 9 STANDARD SRAM, 35 ns, PDSO32 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-32 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 141K |
| 代理商： | CY7C188-35VC |
32K x 9 Static RAM
CY7C188
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
Document #: 38-05053 Rev. **
Revised August 24, 2001
88
Features
High speed
—15 ns
Automatic power-down when deselected
Low active power
— 660 mW
Low standby power
— 140 mW
CMOS for optimum speed/power
TTL-compatible inputs and outputs
Easy memory expansion with CE1, CE2, and OE
features
Functional Description
The CY7C188 is a high-performance CMOS static RAM orga-
nized as 32,768 words by 9 bits. Easy memory expansion is
provided by an active-LOW chip enable (CE1), an active-HIGH
chip enable (CE2), an active-LOW output enable (OE), and
three-state drivers. The device has an automatic power-down
feature that reduces power consumption by more than 75%
when deselected.
Writing to the device is accomplished by taking CE1 and write
enable (WE) inputs LOW and CE2 input HIGH. Data on the
nine I/O pins (I/Oo – I/O8) is then written into the location spec-
ified on the address pins (A0 – A14).
Reading from the device is accomplished by taking CE1 and
OE LOW while forcing WE and CE2 HIGH. Under these con-
ditions, the contents of the memory location specified by the
address pins will appear on the I/O pins.
The nine input/output pins (I/O0 – I/O8) are placed in a high-im-
pedance state when the device is deselected (CE1 HIGH or
CE2 LOW), the outputs are disabled (OE HIGH), or during a
write operation (CE1 LOW, CE2 HIGH, and WE LOW).
The CY7C188 is available in standard 300-mil-wide SOJs.
Logic Block Diagram
Pin Configuration
C188–1
CE2
WE
I/O0
CE1
I/O1
I/O2
I/O3
I/O7
I/O6
I/O5
I/O4
I/O8
I/O4
A1
A2
A3
A4
A5
A6
COLUMN
DECODER
ROW
DE
CODER
SE
N
S
E
AM
PS
INPUT BUFFER
POWER
DOWN
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
DIP/SOJ
12
13
25
28
27
26
A8
A7
A6
A5
A4
A3
A2
WE
VCC
A14
A13
A9
A1
NC
I/O0
CE1
OE
A11
32K x 9
ARRAY
A0
A
11
A
13
A
12
A
14
A
10
29
32
31
30
NC
A0
GND
I/O1
I/O2
I/O3
CE2
A10
A12
I/O5
I/O6
I/O7
I/O8
A
8
A
9
A
7
OE
C188–2
Selection Guide
7C188–15
7C188–20
7C188–25
7C188–35
Maximum Access Time (ns)
15
20
25
35
Maximum Operating Current (mA) Commercial
120
170
165
160
Maximum Standby Current (mA)
35
30
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C292A-25DI | 2K X 8 OTPROM, 25 ns, CDIP24 |
| CY7C43663-12AI | 4K X 36 OTHER FIFO, 9 ns, PQFP128 |
| CY8C3444AXI-116 | MULTIFUNCTION PERIPHERAL, PQFP100 |
| CY8C5386AXI-081 | MULTIFUNCTION PERIPHERAL, PQFP100 |
| CYD18S72AV-133BBI | 256K X 72 DUAL-PORT SRAM, 5.5 ns, PBGA484 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C188-35VCT | 制造商:Rochester Electronics LLC 功能描述:256K (32K X 9)- FAST ASYNCH SRAM - Tape and Reel |
| CY7C1911JV18-300BZC | 功能描述:靜態(tài)隨機存取存儲器 18M QDRII 靜態(tài)隨機存取存儲器 B4 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1911KV18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 18Mb 1.8V 2Mb x 9 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1911KV18-250BZCT | 功能描述:靜態(tài)隨機存取存儲器 18Mb 1.8V 2Mb x 9 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1911KV18-250BZXC | 功能描述:靜態(tài)隨機存取存儲器 18Mb 1.8V 2Mb x 9 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。