參數(shù)資料
型號： CY8C24794-SPPX
廠商： Cypress Semiconductor Corp.
英文描述： PSoCTM Mixed-Signal Array
中文描述： PSoCTM混合信號陣列
文件頁數(shù)： 13/32頁
文件大?。?/td> 366K
代理商： CY8C24794-SPPX
April 14, 2005
Document No. 38-12018 Rev. *F
13
CY8C24794 Final Data Sheet
3. Electrical Specifications
3.1
Absolute Maximum Ratings
3.2
Operating Temperature
3.3
DC Electrical Characteristics
3.3.1
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
≤
T
A
≤
85
°
C, or 3.0V to 3.6V and -40
°
C
≤
T
A
≤
85
°
C, respectively. Typical parameters apply to 5V and 3.3V at 25
°
C and
are for design guidance only.
Table 3-2. Absolute Maximum Ratings
Symbol
T
STG
Description
Min
Typ
Max
Units
Notes
Storage Temperature
-55
–
+100
o
C
Higher storage temperatures will reduce data
retention time.
T
A
Vdd
V
IO
V
IO2
I
MIO
I
MAIO
Ambient Temperature with Power Applied
-40
–
+85
o
C
V
V
Supply Voltage on Vdd Relative to Vss
DC Input Voltage
-0.5
Vss - 0.5
–
–
+6.0
Vdd + 0.5
DC Voltage Applied to Tri-state
Vss - 0.5
–
Vdd + 0.5
V
Maximum Current into any Port Pin
-25
–
+50
mA
Maximum Current into any Port Pin Configured as Analog
Driver
Electro Static Discharge Voltage
Latch-up Current
-50
–
+50
mA
ESD
LU
2000
–
–
–
–
200
V
mA
Human Body Model ESD.
Table 3-3. Operating Temperature
Symbol
T
A
T
AUSB
T
J
Description
Min
Typ
Max
Units
Notes
Ambient Temperature
-40
–
+85
o
C
Ambient Temperature using USB
-10
–
+85
o
C
Junction Temperature
-40
–
+100
o
C
The temperature rise from ambient to junction is
package specific. See
“Thermal Impedance” on
page 30
. The user must limit the power con-
sumption to comply with this requirement.
Table 3-4. DC Chip-Level Specifications
Symbol
Vdd
Description
Min
Typ
Max
Units
Notes
Supply Voltage
3.0
–
5.25
V
See DC POR and LVD specifications,
Table 3-
14 on page 19
.
Conditions are Vdd = 5.0V, T
A
= 25
o
C, CPU = 3
MHz, SYSCLK doubler disabled, VC1 = 1.5
MHz, VC2 = 93.75 kHz, VC3 = 93.75 kHz, ana-
log power = off.
Conditions are Vdd = 3.3V, T
A
= 25
o
C, CPU = 3
MHz, SYSCLK doubler disabled, VC1 = 1.5
MHz, VC2 = 93.75 kHz, VC3 = 0.367 kHz, ana-
log power = off.
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, -40
o
C
≤
T
A
≤
55
o
C, analog
power = off.
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, 55
o
C < T
A
≤
85
o
C, analog
power = off.
I
DD5
Supply Current, IMO = 24 MHz (5V)
–
14
27
mA
I
DD3
Supply Current, IMO = 24 MHz (3.3V)
–
8
14
mA
I
SB
Sleep (Mode) Current with POR, LVD, Sleep Timer, and
WDT.
a
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable systemoperation. This should be compared with devices that have simlar functions
enabled.
–
3
6.5
μ
A
I
SBH
Sleep (Mode) Current with POR, LVD, Sleep Timer, and
WDT at high temperature.
a
–
4
25
μ
A
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