參數(shù)資料
型號: D10040200GT
廠商: Electronic Theatre Controls, Inc.
英文描述: Product Specification
中文描述: 產(chǎn)品規(guī)格
文件頁數(shù): 1/4頁
文件大小: 136K
代理商: D10040200GT
Product Specification
D10040200GT
GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
Excellent linearity
Superior return loss performance
Extremely low distortion
Optimal reliability
Low noise
Unconditionally stable under all terminations
APPLICATION
40 to 1000 MHz CATV amplifier systems
DESCRIPTION
Hybrid Power Doubler amplifier module
employing GaAs die
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBO
L
V
i
V
ov
T
stg
T
mb
PARAMETER
MIN.
MAX.
UNIT
RF input voltage (single tone)
DC supply over-voltage (5 minutes)
storage temperature
operating mounting base temperature
-
-
75
30
dBmV
V
°C
°C
- 40
- 30
+ 100
+ 100
CHARACTERISTICS
Table 1: S-Parameter, Noise Figure, DC Current; V
B
= 24V; T
mb
= 30°C; Z
S
= Z
L
= 75
SYMBOL
G
p
PARAMETER
power gain
CONDITIONS
MIN.
19.5
20.0
1.0
-
TYP.
20.0
MAX.
20.5
22.0
2.0
0.8
UNIT
dB
dB
dB
dB
f = 50 MHz
f = 1000 MHz
f = 40 to 1000 MHz
f = 40 to 1000 MHz
(Peak to Valley)
f = 40 to 320 MHz
f = 320 to 640 MHz
f = 640 to 870 MHz
f = 870 to 1000 MHz
f = 40 to 320 MHz
f = 320 to 640 MHz
f = 640 to 870 MHz
f = 870 to 1000 MHz
f = 50 to 1000 MHz
SL
FL
slope
1)
flatness of frequency
response
input return loss
1.5
S
11
20.0
19.0
17.0
16.0
20.0
19.0
18.0
17.0
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
mA
S
22
output return loss
F
I
tot
noise figure
total current
consumption (DC)
6.5
375.0
350.0
Notes:
1) The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
Page 1 of 4
2005 Aug 04
Document Revision Level B
D10040200GT
GaAs Power Doubler Hybrid
40 – 1000MHz
20.0dB min. Gain @ 1GHz
375mA max. @ 24VDC
相關(guān)PDF資料
PDF描述
D1004UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端))
D1004 METAL GATE RF SILICON FET
D1004UK METAL GATE RF SILICON FET
D1005UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端))
D1005 METAL GATE RF SILICON FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
D10040200GTH 制造商:PDI 制造商全稱:PDI 功能描述:GaAs Power Doubler, 40 - 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC
D1004020B1000FP000 制造商:Vishay Angstrohm 功能描述:Res Thick Film 0402 100 Ohm 1% 1/16W 制造商:Vishay Angstrohm 功能描述:Res Thick Film 0402 100 Ohm 1% 1/16W ±100ppm/°C Molded SMD Paper T/R
D1004020B1001FP000 制造商:Vishay Intertechnologies 功能描述:D10 1K 1% 100 P0
D1004020B1002FP000 制造商:Vishay Intertechnologies 功能描述:D10 10K 1% 100 P0
D1004020B1003FP000 制造商:Vishay Intertechnologies 功能描述:D10 100K 1% 100 P0