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參數(shù)資料
| 型號： | D1004UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（80瓦- 28V的- 175MHz時(shí)，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（80瓦- 28V的- 175MHz時(shí)，單端）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | D1004UK |
D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
175W
70V
±20V
20A
–65 to 150°C
200°C
MECHANICAL DATA
B
C
A
D
(2 pls)
E
F
G
H
I
J
K
M
N
1
4
3
2
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 16 dB MINIMUM
DT
PIN 1
SOURCE (COMMON)
PIN 3
SOURCE (COMMON)
PIN 5
DRAIN
PIN 2
GATE
PIN 4
SOURCE (COMMON)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D1004 | METAL GATE RF SILICON FET |
| D1004UK | METAL GATE RF SILICON FET |
| D1005UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端)) |
| D1005 | METAL GATE RF SILICON FET |
| D1005UK | METAL GATE RF SILICON FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D100-4X | 功能描述:通用繼電器 WILMAR CLOSE DIFF RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:1 Form A (SPST-NO) 觸點(diǎn)電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風(fēng)格:Chassis 觸點(diǎn)材料: |
| D1005 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET |
| D-100-5 | 制造商:Quest Technology International Inc 功能描述: |
| D10050 | 功能描述:工業(yè)移動(dòng)感應(yīng)器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor |
| D10055 | 制造商:PIASECKI AIRCRAFT CORP 功能描述: |
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