參數(shù)資料
型號: D1004UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端))
中文描述: 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管(80瓦- 28V的- 175MHz時(shí),單端)(鍍金多用的DMOS射頻硅場效應(yīng)管(80瓦- 28V的- 175MHz時(shí),單端))
文件頁數(shù): 2/4頁
文件大?。?/td> 35K
代理商: D1004UK
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
70
4
1
7
1
3.2
16
50
20:1
240
120
10
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 80W
V
DS
= 28V
f = 175MHz
V
DS
= 28V
V
DS
= 28V
V
DS
= 28V
V
DS
= 0
V
DS
= V
GS
I
D
= 4A
I
DQ
= 0.4A
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
2%
相關(guān)PDF資料
PDF描述
D1004 METAL GATE RF SILICON FET
D1004UK METAL GATE RF SILICON FET
D1005UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端))
D1005 METAL GATE RF SILICON FET
D1005UK METAL GATE RF SILICON FET
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