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參數(shù)資料
| 型號： | D1023UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(60W-28V-500MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（60瓦- 28V的- 175MHz時，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（60瓦- 28V的，500MHz的單端式）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | D1023UK |
D1023UK
Prelim.3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukP
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
117W
70V
±20V
15A
–65 to 150°C
200°C
MECHANICAL DATA
B
C
A
D
(2 pls)
E
F
G
H
I
J
K
M
N
1
4
3
2
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 28V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 16 dB MINIMUM
DT
PIN 1
SOURCE (COMMON)
PIN 3
SOURCE (COMMON)
PIN 5
DRAIN
PIN 2
GATE
PIN 4
SOURCE (COMMON)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
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PDF描述 |
|---|---|
| D1023 | METAL GATE RF SILICON FET |
| D1023UK | METAL GATE RF SILICON FET |
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| D1027UK | METAL GATE RF SILICON FET |
| D1028UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(300W-28V-175MHz,推挽式)) |
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