參數(shù)資料
型號(hào): D2006UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CERAMIC, DK, 5 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 16K
代理商: D2006UK
D2006UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
70W
65V
±20V
3A
–65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(
2 pls
)
K
2
3
E
1
G
(
4 pls
)
5
4
D
N
M
J
I
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
15W – 28V – 1GHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
相關(guān)PDF資料
PDF描述
D2007UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(5W-28V-400MHz,單端式))
D2007 METAL GATE RF SILICON FET
D2007UK METAL GATE RF SILICON FET
D2008UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(5W-28V-400MHz,單端式))
D2008 METAL GATE RF SILICON FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
D2007 制造商:Dagnall Electronics 功能描述:TRANSFORMER 1.5VA 2 X 9V
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