參數(shù)資料
型號: D2011
廠商: TT electronics Semelab Limited
英文描述: METAL GATE RF SILICON FET
中文描述: 金屬門射頻硅場效應(yīng)管
文件頁數(shù): 1/2頁
文件大?。?/td> 19K
代理商: D2011
相關(guān)PDF資料
PDF描述
D2011UK METAL GATE RF SILICON FET
D2012UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(10W-28V-1GHz,單端式))
D2012UK METAL GATE RF SILICON FET
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D2013UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-28V-1GHz,推拉式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
D2011 制造商:Dagnall Electronics 功能描述:TRANSFORMER 1.5VA 2X 6V
D2011-SB1-V-VO-C111 制造商:DANAHER - INDUSTRIAL/SPECIALTY 功能描述:SOLENOID VALVE, Supply Voltage Max:120VAC, Orifice Size:3/64", Operating Pressur
D2011-SB1-V-VO-C203 制造商:Gems Sensors & Controls 功能描述:SOLENOID VALVE; Supply Voltage Max:12VDC; Orifice Size:3.64"; Operating Pressure Max:900psi; Connection Size:1/4"; Operating Power Max:10W; Operating Voltage Max:12VDC; Port Style:NPT; Valve Type:2-Way Normally Closed
D2011UK 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET
D2012 制造商:Dagnall Electronics 功能描述:TRANSFORMER 1.5VA 2 X 8V