型號(hào) 廠商 描述
q62702-c1886
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c1887
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c1888
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c1889
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
q62702-c2130
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistor (For general AF application High collector current High current gain)
q62702-c2131
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistor (For general AF application High collector current High current gain)
q62702-c2132
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistor (For general AF application High collector current High current gain)
q62702-c2133
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistor (For general AF application High collector current High current gain)
q62702-c2134
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
q62702-c2135
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
q62702-c2136
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
q62702-c2137
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
q62702-c2146
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF driver and output stages High collector current)
q62702-c2147
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF driver and output stages High collector current)
q62702-c2148
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistors (For AF driver and output stages High collector current)
q62702-c2149
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistors (For AF driver and output stages High collector current)
q62702-c2155
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
q62702-c2156
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
q62702-c2157
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
q62702-c2158
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
q62702-c2159
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
q62702-c2160
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
q62702-c228-v16
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c228-v6
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c2280
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 620pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
q62702-c2281
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2282
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 620pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
q62702-c2283
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2284
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)
q62702-c2285
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2286
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2287
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2288
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2289
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 620pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
q62702-c2291
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 620pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
q62702-c2292
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2293
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2294
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2295
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2296
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2310
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2311
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2312
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2313
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2319
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2320
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
q62702-c2321
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2322
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2323
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
q62702-c2324
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon AF Transistor (For general AF applications High collector current High current gain)