- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361199 > Q62702-C2319 (SIEMENS AG) NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) PDF資料下載
參數(shù)資料
| 型號： | Q62702-C2319 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| 中文描述： | NPN硅晶體管自動對焦（為自動輸入級和驅(qū)動器應(yīng)用高電流增益低集電極發(fā)射極飽和電壓） |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-C2319 |
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
￡
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-C2320 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
| Q62702-C2321 | NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| Q62702-C2322 | NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| Q62702-C2323 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
| Q62702-C2324 | NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-C2320 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| Q62702-C2321 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| Q62702-C2322 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| Q62702-C2323 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| Q62702-C2324 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。