型號 廠商 描述
psd935g1-a-20ji
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-20m
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-20mi
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 33000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
psd935g1-a-20u
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-20ui
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 33000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
psd935g1-a-70b81
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-70b81i
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-70j
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-70ji
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-70m
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-70mi
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-a-70u
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-15mi
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-15u
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-15ui
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20b81
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20b81i
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20j
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20ji
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20m
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20mi
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20u
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-20ui
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
psd935g1-b-70b81
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-70b81i
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-70j
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-70ji
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-70m
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-70mi
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
psd935g1-b-70u
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-b-70ui
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-20b81
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-20b81i
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-20j
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-20ji
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-20m
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 360pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
psd935g1-c-20mi
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 360pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
psd935g1-c-20u
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-20ui
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-70b81
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-70b81i
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-70j
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-70ji
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.1pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
psd935g1-c-70m
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.1pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
psd935g1-c-70mi
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-70u
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-70ui
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-90b81
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-90b81i
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers
psd935g1-c-90j
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Configurable Memory System on a Chip for 8-Bit Microcontrollers