參數(shù)資料
型號: DG2012DL-T1-E3
廠商: Vishay Siliconix
文件頁數(shù): 2/9頁
文件大?。?/td> 0K
描述: IC ANALOG SWITCH SPDT SC70-6
標(biāo)準(zhǔn)包裝: 3,000
功能: 開關(guān)
電路: 1 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻: 1.8 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
電流 - 電源: 10nA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP,SC-88,SOT-363
供應(yīng)商設(shè)備封裝: SC-70-6
包裝: 帶卷 (TR)
www.vishay.com
2
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
Vishay Siliconix
DG2012
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Referenced V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC and COM Pins)
± 100
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)b
6-Pin SO70c
250
mW
SPECIFICATIONS (V+ = 2.0 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 2.0 V, ± 10 %, VIN = 0.4 or 1.6 V
e
Tempa
Limits
- 40 to 85 °C
Unit
Minb
Typc
Maxb
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Full
0
V+
V
On-Resistance
rON
V+ = 1.8 V, VCOM = 0.2 V/0.9 V
INO, INC = 10 mA
Room
Fulld
2.7
5.3
Ω
rON Flatness
d
rON
Flatness
V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
3
rON Match
d
Δr
ON
Room
0.25
Switch Off Leakage Currentf
INO(off)
INC(off)
V+ = 2.2 V
VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
Room
Full
- 0.5
- 5.0
0.5
5.0
nA
ICOM(off)
Room
Fulld
- 0.5
- 5.0
0.5
5.0
Channel-On Leakage Currentf
ICOM(on)
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Room
Fulld
- 0.5
- 5.0
0.5
5.0
Digital Control
Input High Voltage
VINH
Full
1.6
V
Input Low Voltage
VINL
Full
0.4
Input Capacitanced
Cin
Full
3
pF
Input Currentf
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
Dynamic Characteristics
Turn-On Timed
tON
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
Room
Fulld
43
63
65
ns
Turn-Off Timed
tOFF
Room
Fulld
23
45
46
Break-Before-Make Timed
td
Room
2
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
Room
7
pC
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
- 63
dB
Crosstalkd
XTALK
Room
- 64
NO, NC Off Capacitance
d
CNO(off)
CNC(off)
VIN = 0 or V+, f = 1 MHz
Room
22
pF
Channel-On Capacitanced
CON
Room
58
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