參數(shù)資料
型號： DG2032DN-T1-E4
廠商： Vishay Siliconix
文件頁數(shù)： 2/6頁
文件大?。?/td> 0K
描述： IC SWITCH DUAL CMOS 12QFN
標(biāo)準(zhǔn)包裝： 2,500
功能： 開關(guān)
電路： 2 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻： 5 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 1.8 V ~ 5.5 V
電流 - 電源： 10nA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 12-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝： 12-QFN（3x3）
包裝： 帶卷 (TR)
DG2032
Vishay Siliconix
New Product
www.vishay.com
Document Number: 72387
S-31650—Rev. A, 18-Aug-03
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NOa
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
"50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current
"200 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
-65 to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)b
12-Pin QFN (3 x 3) c
1295 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Solder Reflow Conditionsd
12-Pin QFN (3 x 3)
240°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 16.2 mW/_C above 70_C
d.
Manual soldering with an iron is not recommended for leadless compo-
nents. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper lip cannot be guar-
anteed and is not required to ensure adequate bottom side solder inter-
connection.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
Full
0
V+
V
On-Resistance
rON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V
INO, INC = 10 mA
Room
Full
3.0
5
6.5
rON Flatness
rON
Flatness
V+ = 2.7 V
V
0 to V+ I
I
10 mA
Room
1.6
W
rON Match Between Channels
DrON
VCOM = 0 to V+, INO, INC = 10 mA
Room
0.4
Switch Off Leakage Current
INO(off),
INC(off)
V+ = 3.3 V, VNO, VNC = 0.3 V/3 V
Room
Full
-1
-10
0.01
1
10
Switch Off Leakage Current
ICOM(off)
V+ = 3.3 V, VNO, VNC = 0.3 V/3 V
VCOM = 3 V/0.3 V
Room
Full
-1
-10
0.01
1
10
nA
Channel-On Leakage Current
ICOM(on)
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
-1
-10
0.01
1
10
Digital Control
Input High Voltage
VINH
Full
2.0
V
Input Low Voltage
VINL
Full
0.4
V
Input Capacitance
Cin
Full
5
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
1
mA
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2 0 V RL = 50 W CL = 35 pF
Room
Full
28
53
59
Turn-Off Time
tOFF
VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF
Room
Full
13
38
ns
Break-Before-Make Time
td
VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF
Full
1
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
Room
38
pC
Off-Isolationd
OIRR
RL = 50 W CL = 5 pF f = 1 MHz
Room
-78
dB
Crosstalkd
XTALK
RL = 50 W, CL = 5 pF, f = 1 MHz
Room
-82
dB
NO NC Off Capacitanced
CNO(off)
Room
15
NO, NC Off Capacitanced
CNC(off)
VIN = 0 or V+ f = 1 MHz
Room
15
pF
Channel On Capacitanced
CNO(on)
VIN = 0 or V+, f = 1 MHz
Room
49
pF
Channel-On Capacitanced
CNC(on)
Room
45
Power Supply
Power Supply Current
I+
VIN = 0 or V+
Full
0.01
1.0
mA
Notes:
a.
Room = 25°C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
VIN = input voltage to perform proper function.
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