參數(shù)資料
型號(hào): DG636EN-T1-E4
廠商: Vishay Siliconix
文件頁(yè)數(shù): 13/14頁(yè)
文件大?。?/td> 0K
描述: IC SWITCH DUAL SPDT 16-MINIQFN
標(biāo)準(zhǔn)包裝: 1
功能: 開關(guān)
電路: 2 x SPDT
導(dǎo)通狀態(tài)電阻: 170 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 2.7 V ~ 12 V,± 2.7 V ~ 5 V
電流 - 電源: -500nA,500nA
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-WFQFN
供應(yīng)商設(shè)備封裝: 16-迷你型QFN(1.8x2.6)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: DG636EN-T1-E4DKR
www.vishay.com
8
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
Vishay Siliconix
DG636
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Leakage Current vs. Temperature
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
Total Harmonic Distortion vs. Frequency
Temperature (°C)
Leakage
Current
(pA)
1
10
100
1000
10 000
100 000
- 60 - 40 - 20
0
20
40
60
80
100
120
140
ID(off)
ID(on)
IS(off)
V+ = + 5.0 V
V- = - 5.0 V
Frequency (Hz)
L
OSS
,O
IRR
,X
TALK
(dB)
100K
1M
10M
100M
1G
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
10
OIRR
LOSS
XTALK
V+ = ± 5.0 V
RL = 50
Frequency (Hz)
THD
(%)
0.001
0.01
0.1
1
10
100
10
100
1000
10 000
100 000
RL = 600
VSignal = 1 VRMS
V+ = 3.0 V
V+ = 5.0 V
V± = ± 5.0 V
Leakage Current vs. Temperature
Charge Injection vs. Analog Voltage
Switching Threshold vs. Supply Voltage
Temperature (°C)
Leakage
Current
(pA)
1
10
100
1000
10 000
- 60 - 40 - 20
0
20
40
60
80
100
120
140
V+ = 13.2 V
V- = 0 V
ID(off)
ID(on)
IS(off)
VS - Analog Voltage (V)
Q
-
Charge
Injection
(pC)
- 1.2
- 1
- 0.8
- 0.6
- 0.4
- 0.2
0
0.2
0.4
0.6
0.8
1.0
1.2
- 6 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V+ = + 5.0 V
V- = - 5.0 V
V+ = + 5.0 V
V- = 0 V
V+ = + 3.0 V
V- = 0 V
V+ = + 13.2 V
V- = 0 V
V+ = + 12 V
V- = 0 V
V+ - Supply Voltage (V)
V
T
-
Switching
Threshold
(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
02
46
8
10
12
14
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