參數(shù)資料
型號(hào): DG758BX
英文描述: GTO Thyristor - Asymmetric - Disc / Puk Devices
中文描述: GTO的晶閘管-不對(duì)稱-光盤/北辰設(shè)備
文件頁(yè)數(shù): 3/19頁(yè)
文件大?。?/td> 216K
代理商: DG758BX
DG758BX45
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
10000
V
RGM
= 16V, No gate/cathode resistor
μ
C
I
T
= 3000A, V
DM
= 3000V
Snubber Cap Cs = 6.0
μ
F,
di
GQ
/dt = 40A/
μ
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
4.0
V
V
DRM
= 4500V, V
RG
= 0V
-
100
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.2
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
3.5
A
mA
mJ
3000
-
V
D
= 2250V
I
T
= 3000A, dI
T
/dt = 300A/
μ
s
I
FG
= 40A, rise time < 1.0
μ
s
μ
s
1.5
-
-
3.0
μ
s
-
6300
mJ
-
20.6
μ
s
μ
s
2.2
-
μ
s
22.8
-
-
20000
μ
C
-
830
A
At 3000A peak, I
G(ON)
= 8A d.c.
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