參數(shù)資料
型號: DG758BX
英文描述: GTO Thyristor - Asymmetric - Disc / Puk Devices
中文描述: GTO的晶閘管-不對稱-光盤/北辰設(shè)備
文件頁數(shù): 8/19頁
文件大?。?/td> 216K
代理商: DG758BX
DG758BX45
8/19
0
10
20
30
40
50
60
70
80
Peak forward gate current I
FGM
- (A)
Fig.11 Turn-on energy vs peak forward gate current
500
750
1000
1250
1500
1750
2000
2250
2500
T
O
2750
3000
Conditions:
I
T
= 3000A, T
j
= 125
C
Cs = 6
μ
F, Rs = 4.4
,
dI
T
/dt = 300A/
μ
s,
dI
FG
/dt = 40A/
μ
s
V
D
= 2250V
V
D
= 1500V
V
D
= 750V
3250
3500
0
50
100
150
200
250
300
Rate of rise of on-state current dI
T/dt
- (A/μs)
0
500
1000
1500
2000
T
O
3000
Conditions:
I
T
= 3000A
T
j
= 125
C
Cs = 6μF
Rs = 4.4 Ohms
I
FGM
= 40A
V
D
= 2250V
2500
V
D
= 1500V
V
D
= 750V
0
500
1000
1500
2000
3000
2500
On-state current - (A)
0
500
1000
1500
2000
2500
3000
T
O
Conditions:
T
j
= 125
C, I
FGM
= 40A
Cs = 6
μ
F, Rs = 4.4
dI
T
/dt = 300A/
μ
s
dI
FG
/dt = 40A/
μ
s
V
D
= 1500V
V
D
= 2250V
V
D
= 750V
Fig.10 Turn-on energy vs on-state current
Fig.12 Turn-on energy vs rate of rise of on-state current
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