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參數(shù)資料
| 型號(hào)： | DIM1200NSM17-E |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 169K |
| 代理商： | DIM1200NSM17-E |
DIM1200DDM17-E000
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 75C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
kW
kA
2
s
V
PC
Max.
1700
±
20
1200
2400
6.94
200
4000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
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