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參數(shù)資料
| 型號(hào)： | DIM1200NSM17-E |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開關(guān) |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 169K |
| 代理商： | DIM1200NSM17-E |
DIM1200DDM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/9
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics
Fig. 8 IGBT reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2600
2400
2800
0
400
800
1200
1600
2000
Collector-emitter voltage, V
ce
- (V)
C
C
T
case
= 125C
V
ge
= ±15V
R
g(min)
= 1.5 Ohms
Module
Chip
Fig. 10 Transient thermal impedance
1
0.1
0.001
10
100
0.01
1
0.1
10
Pulse width, t
p
- (s)
T
t
IGBT
Diode
R
i
(
C/KW)
t
i
(ms)
R
i
(
C/KW)
t
i
(ms)
1
0.56
0.12
1.23
0.11
2
4.00
3.89
9.26
4.24
3
5.64
47.15
12.96
48.75
4
7.81
257.21
16.53
256.75
Diode
Transistor
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward voltage, V
F
- (V)
F
F
T
j
= 25C
T
j
= 125C
0
200
400
600
800
1000
1200
R
r
1400
1600
0
200
400
600
Reverse voltage, V
r
- (V)
800 1000 1200 1400 1600 1800
T
j
= 125C
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