參數(shù)資料
型號(hào): DIM1800ESM12-A
英文描述: IGBT Modules - Single Switch
中文描述: IGBT模塊-單開(kāi)關(guān)
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 221K
代理商: DIM1800ESM12-A
DIM1800ESM12-A000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
300
600
900
1200
1500
1800
2400
2100
3000
2700
3300
3600
0.5
1.0
Collector-emitter voltage, V
ce
- (V)
1.5
2.0
2.5
3.0
3.5
4.0
C
C
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25
C
V
is measured at power busbars
and not the auxiliary terminals
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-emitter voltage, V
ce
- (V)
C
C
0
300
600
900
1200
1500
1800
2400
2100
3000
2700
3300
3600
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 125
C
V
is measured at power busbars
and not the auxiliary terminals
0
50
100
150
200
250
300
350
400
0
400
800
1200
1600
2000
Collector current, I
C
- (A)
S
s
E
off
E
on
E
rec
Conditions:
V
cc
= 600V
T
c
= 125°C
R
g
= 1.2Ohms
0
1.0
50
100
150
200
250
300
350
400
450
1.2
1.4
Gate Resistance , R
g
- (Ohms)
1.6
1.8
2
2.2
2.4
S
s
Conditions:
V
cc
= 600V
I
C
= 1800A
T
c
= 125
°
C
E
off
E
on
E
rec
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