參數(shù)資料
型號: DIM1800ESM12-A
英文描述: IGBT Modules - Single Switch
中文描述: IGBT模塊-單開關(guān)
文件頁數(shù): 7/10頁
文件大?。?/td> 221K
代理商: DIM1800ESM12-A
DIM1800ESM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward voltage, V
F
- (V)
F
F
0
400
800
1200
1600
2000
2400
3200
2800
4000
3600
4400
4800
V
is measured at power busbars
and not the auxiliary terminals
T
j
= 25
C
T
= 125
C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
0
100 200 300 400 500 600 700 800 900 10001100 12001300
Collector emitter voltage, V
ce
- (V)
C
C
T
case
= 125
C
V
ge
=15V
R
g
= 1.2 Ohms
Module I
C
Chip I
C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
200
400
600
800
1000
1200
1400
Reverse voltage, V
R
- (V)
R
r
T
j
= 125
C
0.1
0.001
1
10
100
0.01
1
0.1
10
Pulse width, t
p
- (s)
T
t
°
C
Diode
Transistor
IGBT
Diode
R
i
(C/KW)
τ
i
(ms)
R
(C/KW)
τ
i
(ms)
1
0.25
0.12
0.55
0.11
2
1.78
3.89
4.12
4.24
3
2.51
47.15
5.76
48.75
4
3.47
257.21
7.35
256.75
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DIM1800ESM12-A00 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR
DIM1800ESM12-A000 制造商:n/a 功能描述:IGBT Module
DIM1800ESS12A00 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR
DIM1800ESS12-A000 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch IGBT Module
DIM200BSS12-A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Single Switch