參數(shù)資料
型號(hào): DIM200WHS17-E
英文描述: IGBT Modules - Half Bridge
中文描述: IGBT模塊-半橋
文件頁數(shù): 5/9頁
文件大小: 168K
代理商: DIM200WHS17-E
DIM200BSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/9
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
50
20
240
95
25
2
30
150
13
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 70nH
I
F
= 200A, V
R
= 600V,
dI
F
/dt = 2300A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
800
70
27
385
110
40
50
160
20
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 70nH
I
F
= 200A, V
R
= 600V,
dI
F
/dt = 2000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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