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參數(shù)資料
| 型號(hào)： | DIM50CHS17-E |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | DIM50CHS17-E |
DIM500BSS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/9
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
250
45
490
150
30
4
30
240
9
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 500A
V
GE
=
±
15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 500A, V
R
= 300V,
dI
F
/dt = 2800A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
650
500
65
550
150
50
40
265
10
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 500A
V
GE
=
±
15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 500A, V
R
= 300V,
dI
F
/dt = 2800A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| DIM600BSS12-A000 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch IGBT Module |
| DIM600BSS12-E000 | 制造商:n/a 功能描述:IGBT Module |
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