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| 型號(hào)： | DIM50CHS17-E |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | DIM50CHS17-E |
DIM500BSS06-S000
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.4 Typical switching energy vs collector current
Fig.5 Typical switching energy vs gate resistance
0
100
200
300
400
1000
0
1
2.0
3
4
5
Collector-emitter voltage, V
ce
- (V)
C
c
900
500
600
700
800
Common emitter
T
case
= 25
C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
Collector-emitter voltage, V
ce
- (V)
C
c
200
400
600
800
1000
100
300
500
700
900
0
1.0
2.0
3.0
4.0
5.0
6.0
Common emitter
T
case
= 125
C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
10
20
30
40
50
60
70
80
90
0
100
200
Collector current, I
C
- (A)
300
400
500
600
S
s
Conditions:
T
case
= 125oC
V
cc
= 300V
R
g
= 4.7 ohms
E
on
E
off
E
rec
0
10
20
30
40
50
60
70
80
4
6
8
10
11
12
13
14
15
16
Gate resistance, R
g
- Ohms
S
s
9
7
5
E
off
E
rec
E
on
Conditions:
T
case
= 125oC
V
cc
= 300V
I
C
= 500A
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